2inch C-face Fe-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices
The achieved breakdown voltage of the Fe-doped GaN epitaxial layer can be as high as 2457 V, which is attributed to the Fe-doped GaN epitaxial layer with higher resistance, which can sustain the high breakdown voltage. The details of the correlation between the surface morphology, Fe concentration, and thickness of Fe-doped GaN epitaxial layers used for high breakdown voltage devices will be also discussed in this paper.
| 2-inch Free-standing SI-GaN Substrates |
| | Excellent level (S) | Production level (A) | Research level (B) | Dummy level (C) | 
Note: (1) Useable area: edge and macro defects exclusion (2) 3 points: the miscut angles of positions (2, 4, 5) are 0.35 ± 0.15o |
| S-1 | S-2 | A-1 | A-2 |
| Dimension | 50.8 ± 1 mm |
| Thickness | 350 ± 25 μm |
| Orientation flat | (1-100) ± 0.5o, 16 ± 1 mm |
| Secondary orientation flat | (11-20) ± 3o, 8 ± 1 mm |
| Resistivity (300K) | > 1 x 106 Ω·cm for Semi-insulating (Fe-doped; GaN-FS-C-SI-C50) |
| TTV | ≤ 15 μm |
| BOW | ≤ 20 μm | ≤ 40 μm |
| Ga face surface roughness | < 0.2 nm (polished) or < 0.3 nm (polished and surface treatment for epitaxy) |
| N face surface roughness | 0.5 ~1.5 μm option: 1~3 nm (fine ground); < 0.2 nm (polished) |
| Package | Packaged in a cleanroom in single wafer container |
| Useable area | > 90% | >80% | >70% |
| Dislocation density | <9.9x105 cm-2 | <3x106 cm-2 | <9.9x105 cm-2 | <3x106 cm-2 | <3x106 cm-2 |
| Orientation:C plane (0001) off angle toward M-axis | 0.35 ± 0.15o (3 points) | 0.35 ± 0.15o (3 points) | 0.35 ± 0.15o (3 points) |
| Macro defect density (hole) | 0 cm-2 | < 0.3 cm-2 | < 1 cm-2 |
| Max size of macro defects | | < 700 μm | < 2000 μm | < 4000 μm |
* National standards of China (GB/T32282-2015)
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