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: Shanghai GaNova Electronic Information Co., Ltd.

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: 2inch GaN Epitaxial Wafer C Face Fe Doped SI Type Free Standing

: Fe Doped GaN Substrates Resistivity > 10⁶ Ω·Cm RF Devices

: 2 inch Free-standing SI-GaN Substrates

: Gallium Nitride Semiconductor Wafer 325um 375um C Plane

: 375 um GaN Epitaxial Wafer Free Standing U-GaN SI-GaN Substrates

: 2 Inch U GaN Substrates SI GaN Substrates 50.8mm

: Single Crystal GaN Epitaxial Wafer 2inch C Face Un Doped N Type

: 50.8mm Gallium Nitride Semiconductor Wafer 2 Inch Free Standing

: Free Standing U / SI GaN Epitaxial Wafer 50.8 mm 350 um

: SP Face 5 X 10mm2 Gallium Nitride Substrate 350um

: 5x10mm2 GaN Epitaxial Wafer Un Doped SI Type

: GaN Single Crystal Gallium Nitride Wafer SI Type

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