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SP Face 5 X 10mm2 Gallium Nitride Substrate 350um

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SP Face 5 X 10mm2 Gallium Nitride Substrate 350um

Brand Name : GaNova

Model Number : JDCD01-001-018

Certification : UKAS/ISO9001:2015

Place of Origin : Suzhou China

Payment Terms : T/T

Supply Ability : 10000pcs/month

Delivery Time : 3-4 week days

Packaging Details : Vacuum packing in a class 10000 clean room environment,in cassettes of 6pcs or single wafer containers.

Product Name : Free-standing GaN Substrates

Thickness : 350 ±25µm

TTV : ≤ 10µm

BoW : - 10µm ≤ BOW ≤ 10µm

Dislocation Density : From 1 x 10⁵ to 3 x 10⁶cm⁻²

Macro Defect Density : 0cm⁻²

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5 x 10mm2 Free-standing GaN Substrates 350 ±25 µm From 1 x 105 to 3 x 106 cm-2

5*10mm2 SP-face (20-21)/(20-2-1) Un-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices wafer


Overview

There are three main substrates that are used with GaN - Silicon Carbide (SiC), Silicon (Si) and Diamond. GaN on SiC is the most common of the three and has been used in various applications in the Military and for High Power Wireless Infrastructure Applications. GaN on Si is a newer substrate whose performance is not as good as SiC but it is more economical. GaN on Diamond is the best performing, however since it is new and relatively expensive, applications, where this has been used, are limited. We have compared all three GaN Substrates in the table below.

(20-21)/(20-2-1) face Free-standing GaN Substrates
Item

GaN-FS-SP-U-S

GaN-FS-SP-N-S

GaN-FS-SP-SI-S

SP Face 5 X 10mm2 Gallium Nitride Substrate 350um

Remarks:

A circular arc angle (R < 2 mm) is used for distinguishing the front and back surface.

Dimensions 5 x 10 mm2
Thickness 350 ±25 µm
Orientation

(20-21)/(20-2- 1) plane off angle toward A-axis 0 ±0.5°

(20-21)/(20-2- 1) plane off angle toward C-axis - 1 ±0.2°

Conduction Type N-type N-type Semi-Insulating
Resistivity (300K) < 0.1 Ω·cm < 0.05 Ω·cm > 106 Ω·cm
TTV ≤ 10 µm
BOW - 10 µm ≤ BOW ≤ 10 µm
Front Surface Roughness

< 0.2 nm (polished);

or < 0.3 nm (polished and surface treatment for epitaxy)

Back Surface Roughness

0.5 ~1.5 μm

option: 1~3 nm (fine ground); < 0.2 nm (polished)

Dislocation Density From 1 x 105 to 3 x 106 cm-2
Macro Defect Density 0 cm-2
Useable Area > 90% (edge exclusion)
Package Packaged in a class 100 clean room environment, in 6 PCS container, under a nitrogen atmosphere

Appendix: The diagram of miscut angle

SP Face 5 X 10mm2 Gallium Nitride Substrate 350um

If δ1= 0 ±0.5°, then (20-21)/(20-2- 1) plane off angle toward A-Axis is 0 ±0.5°.

If δ2= - 1 ±0.2°, then (20-21)/(20-2- 1) plane off angle toward C-Axis is - 1 ±0.2°.

About Us

We specialize in processing a variety of materials into wafers, substrates and customized optical glass parts.components widely used in electronics, optics, opto electronics and many other fields. We also have been working closely with many domestic and oversea universities, research institutions and companies, provide customized products and services for their R&D projects. It's our vision to maintaining a good relationship of cooperation with our all customers by our good reputations.

FAQ

Q: Are you trading company or manufacturer ?
We are factory.
Q: How long is your delivery time?
Generally it is 3-5 days if the goods are in stock.
or it is 7-10 days if the goods are not in stock, it is according to quantity.
Q: Do you provide samples ? is it free or extra ?
Yes, we could offer the sample for free charge but do not pay the cost of freight.
Q: What is your terms of payment ?
Payment <=5000USD, 100% in advance.
Paymen >=5000USD, 80% T/T in advance , balance before shippment.


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