JDCD03-001-004 SiC Epitaxial Wafer Wafer Edge Beveling 350.0μm± 25.0 μm
JDCD03-001-004
Overview
Several methods of growing the epitaxial layer on existing silicon or other wafers are currently used: metal organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE), LPE, HVPE.
It involves the growth of crystals of one material on the crystal face of another (heteroepitaxy) or the same (homoepitaxy) material. The lattice structure and orientation or lattice symmetry of the thin film material is identical to that of the substrate on which it is deposited. Most importantly, if the substrate is a single crystal, then the thin film will also be a single crystal. Contrast with self-assembled monolayer and mesotaxy.
| Property |
P-MOS Grade |
P-SBD Grade |
D Grade |
| Crystal Form |
4H |
| Polytype |
None Permitted |
Area≤5% |
| (MPD) a |
≤0.2 /cm2 |
≤0.5 /cm2 |
≤5 /cm2 |
| Hex Plates |
None Permitted |
Area≤5% |
| Hexagonal Polycrystal |
None Permitted |
| Inclusions a |
Area≤0.05% |
Area≤0.05% |
N/A |
| Resistivity |
0.015Ω•cm—0.025Ω•cm |
0.015Ω•cm—0.025Ω•cm |
0.014Ω•cm—0.028Ω•cm |
| (EPD)a |
≤4000/cm2 |
≤8000/cm2 |
N/A |
| (TED)a |
≤3000/cm2 |
≤6000/cm2 |
N/A |
| (BPD)a |
≤1000/cm2 |
≤2000/cm2 |
N/A |
| (TSD)a |
≤600/cm2 |
≤1000/cm2 |
N/A |
| Stacking Fault |
≤0.5% Area |
≤1% Area |
N/A |
|
Surface Metal Contamination
|
(Al, Cr, Fe, Ni, Cu, Zn, Pb, Na, K, Ti, Ca ,V, Mn) ≤1E11 cm-2
|
| Diameter |
150.0 mm +0mm/-0.2mm |
| Surface Orientation |
Off-Axis:4°toward <11-20>±0.5 ° |
| Primary Flat Length |
47.5 mm ± 1.5 mm |
| Secondary Flat Length |
No Secondary Flat |
| Primary Flat Orientation |
Parallel to<11-20>±1° |
| Secondary Flat Orientation |
N/A |
| Orthogonal Misorientation |
±5.0° |
| Surface Finish |
C-Face:Optical Polish,Si-Face:CMP |
| Wafer Edge |
Beveling |
|
Surface Roughness
(10μm×10μm)
|
Si Face Ra≤0.20 nm ； C Face Ra≤0.50 nm |
| Thickness a |
350.0μm± 25.0 μm |
| LTV(10mm×10mm)a |
≤2μm |
≤3μm |
| (TTV)a |
≤6μm |
≤10μm |
| (BOW) a |
≤15μm |
≤25μm |
≤40μm |
| (Warp) a |
≤25μm |
≤40μm |
≤60μm |
| Chips/Indents |
None Permitted ≥0.5mm Width and Depth |
Qty.2 ≤1.0 mm Width and Depth |
|
Scratches a
(Si Face,CS8520)
|
≤5 and Cumulative Length≤0.5×Wafer Diameter |
≤5 and Cumulative Length≤1.5×Wafer
Diameter
|
| TUA(2mm*2mm) |
≥98% |
≥95% |
N/A |
| Cracks |
None Permitted |
| Contamination |
None Permitted |
| Property |
P-MOS Grade |
P-SBD Grade |
D Grade |
| Edge Exclusion |
3mm |
Remark: 3mm edge exclusion is used for the items marked with a.
About Us
We specialize in processing a variety of materials into wafers, substrates and customized optical glass parts.components widely used in electronics, optics, opto electronics and many other fields. We also have been working closely with many domestic and oversea universities, research institutions and companies, provide customized products and services for their R&D projects. It's our vision to maintaining a good relationship of cooperation with our all customers by our good reputations.
FAQ
Q: Are you trading company or manufacturer ?
We are factory.
Q: How long is your delivery time?
Generally it is 3-5 days if the goods are in stock.
or it is 7-10 days if the goods are not in stock, it is according to quantity.
Q: Do you provide samples ? is it free or extra ?
Yes, we could offer the sample for free charge but do not pay the cost of freight.
Q: What is your terms of payment ?
Payment <=5000USD, 100% in advance.
Paymen >=5000USD, 80% T/T in advance , balance before shippment.
Product Tags:
|
|
4H Crystal Form SiC Epitaxial Wafer Wafer Edge Beveling 350.0um ± 25.0um Images
|
