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5x10mm2 Sp Face Gan Epitaxial Wafer Un Doped Si Type Gan Single Crystal Substrate

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5x10mm2 Sp Face Gan Epitaxial Wafer Un Doped Si Type Gan Single Crystal Substrate

Brand Name : GaNova

Model Number : JDCD01-001-018

Certification : UKAS/ISO9001:2015

Place of Origin : Suzhou China

Payment Terms : T/T

Supply Ability : 10000pcs/month

Delivery Time : 3-4 week days

Packaging Details : Vacuum packing in a class 10000 clean room environment,in cassettes of 6pcs or single wafer containers.

Product Name : Free-Standing GaN Single Crystal Substrate

Dimensions : 5 x10mm²

Thickness : 350 ±25µm

TTV : ≤ 10µm

BoW : - 10µm ≤ BOW ≤ 10µm

Dislocation Density : From 1 x 10⁵to 3 x 10⁶cm⁻²

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5*10mm2 SP-face (20-21)/(20-2-1) Un-doped SI-type Free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices wafer


Overview
Different Types of Generative Adversarial Networks (GANs)

DC GAN – It is a Deep convolutional GAN. ...
Conditional GAN and Unconditional GAN (CGAN) – Conditional GAN is deep learning neural network in which some additional parameters are used.

(20-21)/(20-2-1) face Free-standing GaN Substrates
Item

GaN-FS-SP-U-S

GaN-FS-SP-N-S

GaN-FS-SP-SI-S

5x10mm2 Sp Face Gan Epitaxial Wafer Un Doped Si Type Gan Single Crystal Substrate

Remarks:

A circular arc angle (R < 2 mm) is used for distinguishing the front and back surface.

Dimensions 5 x 10 mm2
Thickness 350 ±25 µm
Orientation

(20-21)/(20-2- 1) plane off angle toward A-axis 0 ±0.5°

(20-21)/(20-2- 1) plane off angle toward C-axis - 1 ±0.2°

Conduction Type N-type N-type Semi-Insulating
Resistivity (300K) < 0.1 Ω·cm < 0.05 Ω·cm > 106 Ω·cm
TTV ≤ 10 µm
BOW - 10 µm ≤ BOW ≤ 10 µm
Front Surface Roughness

< 0.2 nm (polished);

or < 0.3 nm (polished and surface treatment for epitaxy)

Back Surface Roughness

0.5 ~1.5 μm

option: 1~3 nm (fine ground); < 0.2 nm (polished)

Dislocation Density From 1 x 105 to 3 x 106 cm-2
Macro Defect Density 0 cm-2
Useable Area > 90% (edge exclusion)
Package Packaged in a class 100 clean room environment, in 6 PCS container, under a nitrogen atmosphere

Appendix: The diagram of miscut angle

5x10mm2 Sp Face Gan Epitaxial Wafer Un Doped Si Type Gan Single Crystal Substrate

If δ1= 0 ±0.5°, then (20-21)/(20-2- 1) plane off angle toward A-Axis is 0 ±0.5°.

If δ2= - 1 ±0.2°, then (20-21)/(20-2- 1) plane off angle toward C-Axis is - 1 ±0.2°.

About Us

We specialize in processing a variety of materials into wafers, substrates and customized optical glass parts.components widely used in electronics, optics, opto electronics and many other fields. We also have been working closely with many domestic and oversea universities, research institutions and companies, provide customized products and services for their R&D projects. It's our vision to maintaining a good relationship of cooperation with our all customers by our good reputations.

FAQ

Q: Are you trading company or manufacturer ?
We are factory.
Q: How long is your delivery time?
Generally it is 3-5 days if the goods are in stock.
or it is 7-10 days if the goods are not in stock, it is according to quantity.
Q: Do you provide samples ? is it free or extra ?
Yes, we could offer the sample for free charge but do not pay the cost of freight.
Q: What is your terms of payment ?
Payment <=5000USD, 100% in advance.
Paymen >=5000USD, 80% T/T in advance , balance before shippment.


Product Tags:

5x10.5mm2 GaN Epitaxial Wafer

      

Un Doped Epitaxial Wafer ISO

      

SP Face GaN Epitaxial Wafer

      
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