5*10mm2 A-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device/laser wafer
Overview
Gallium nitride (GaN) is a very hard, mechanically stable wide bandgap semiconductor. With higher breakdown strength, faster switching speed, higher thermal conductivity and lower on-resistance, power devices based on GaN significantly outperform silicon-based devices.
Researchers from North Carolina State University and Purdue University have shown that the semiconductor material gallium nitride (GaN) is non-toxic and is compatible with human cells – opening the door to the material's use in a variety of biomedical implant technologies.
| A face Free-standing GaN Substrates |
| Item | GaN-FS-A-U-S | GaN-FS-A-N-S | GaN-FS-A-SI-S |  Remarks:
A circular arc angle (R < 2 mm) is used for distinguishing the front and back surface. |
| Dimensions | 5 x 10 mm2 |
| Thickness | 350 ±25 µm |
| Orientation | A plane (11-20) off angle toward M-axis 0 ±0.5° A plane (11-20) off angle toward C-axis - 1 ±0.2° |
| Conduction Type | N-type | N-type | Semi-Insulating |
| Resistivity (300K) | < 0.1 Ω·cm | < 0.05 Ω·cm | > 106 Ω·cm |
| TTV | ≤ 10 µm |
| BOW | - 10 µm ≤ BOW ≤ 10 µm |
| Front Surface Roughness | < 0.2 nm (polished); or < 0.3 nm (polished and surface treatment for epitaxy) |
| Back Surface Roughness | 0.5 ~1.5 μm option: 1~3 nm (fine ground); < 0.2 nm (polished) |
| Dislocation Density | From 1 x 105 to 3 x 106 cm-2 |
| Macro Defect Density | 0 cm-2 |
| Useable Area | > 90% (edge exclusion) |
| Package | Packaged in a class 100 clean room environment, in 6 PCS container, under a nitrogen atmosphere |
Appendix: The diagram of miscut angle
If δ1= 0 ±0.5°, then A plane (11-20) off angle toward M-Axis is 0 ±0.5°.
If δ2= -1 ±0.2°, then A plane (11-20) off angle toward C-Axis is - 1 ±0.2°.
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FAQ
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or it is 7-10 days if the goods are not in stock, it is according to quantity.
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TTV ≤ 10µm A-Face Un-Doped N-Type Free-Standing GaN Single Crystal Substrate Resistivity 0.1 Ω·cm Power Device/Laser W Images
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